EEE
Abstract
In this paper, a new complementary gate driver for power metal-oxide semiconductor fieldeffect transistors and insulated gate bipolar transistors is presented based on the use of a piezoelectric transformer (PT). This type of transformer has a high integration capability. Its design is based on a multilayer structure working in the second thickness resonance mode. A new design method has been used based on an analytical Mason model in order to optimize the efficiency, the available power at the transformer secondary ends, and the total volume. This design method takes into account mechanical losses and heating of the piezoelectric material; it can be extended to predict the characteristics of the PT: gain, transmitted power, efficiency, and heating of piezoelectric materials according to load resistance.
Index Terms-Insulated gate bipolar transistors (IGBTs), metal-oxide semiconductor field-effect transistors (MOSFETs), piezoelectric transformer (PT).
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